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    Samsung starts mass production of 512GB eUFS 3.1 storage chips


    Last updated: March 18th, 2020 at 02:55 UTC+01:00

    Samsung, the world leader in memory and storage technologies, is frequently the first brand to release chips based on newer technologies. It was among the first brands to make UFS 2.0, UFS 2.1, and UFS 3.0 based storage chips. Now, the company has announced that it has started mass producing 512GB storage chips that are based on the new, eUFS 3.1 standard.

    These 512GB eUFS 3.1 chips are faster than the eUFS 3.0 storage used in the Galaxy S20 smartphone lineup. We can expect eUFS 3.0 storage to show up in high-end smartphones, such as the Galaxy Note 20. These eUFS 3.1 storage chips can reach sequential read and write speeds of up to 2100MB/s and 1200MB/s, respectively. The sequential write speed is now three times more than it was on eUFS 3.0 chips.

    Random read and write IOPS have seen improvements as well, at 100,000 IOPS and 70,000 IOPS, respectively. Samsung says that these chips could be used to save 8K videos recorded on modern flagship smartphones without any buffering. Around 100GB of data can be transferred from old phones to eUFS 3.1 storage equipped phones within 1.5 minutes.

    Cheol Choi, Executive Vice President of Memory Sales & Marketing at Samsung Electronics, said, “With our introduction of the fastest mobile storage, smartphone users will no longer have to worry about the bottleneck they face with conventional storage cards. The new eUFS 3.1 reflects our continuing commitment to supporting the rapidly increasing demands from global smartphone makers this year.

    Samsung will offer eUFS 3.1 storage chips in 128GB and 256GB capacities as well. The South Korean chip giant started the mass production of fifth-generation V-NAND storage chips at its X2 line in Xi’an, China. The company is also planning to shift its P1 line in Pyeongtaek, South Korea, from mass-producing fifth-generation chips to sixth-generation chips to keep up with the demand.

    Phone UFS 3.1

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