Samsung has unveiled the world’s first DDR5 DRAM chips that are made using 12nm semiconductor fabrication technology. The company revealed its 16Gb DDR5 DRAM chips and said that they’ve already been evaluated for compatibility with AMD’s Zen processors.
The new chips are more power efficient and offer 23% higher performance than previous-generation DRAM chips. The South Korean firm said it made this technological leap was made possible by using high-κ material that increases cell capacitance. Samsung also used its proprietary technology to improve critical circuits.
The company’s new DDR5 DRAM chips use advanced, multi-layer lithography for the industry’s highest die density and offer a 20% higher wafer productivity. These chips are capable of a data transmission speed of up to 7.2Gbps, which is equivalent to processing two 30GB 4K movies in just one second.
Samsung will start the mass production of its 12nm-class DDR5 DRAM chips in early 2023. We can expect products based on these DRAM chips sometime in Q4 2023.
Jooyoung Lee, Executive VP of DRAM Product & Technology at Samsung Electronics, said, “Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5 DRAM. With exceptional performance and power efficiency, we expect our new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centers and AI-driven systems.“
