Samsung to defend technical superiority against Chinese memory chip brands

Samsung, the world's biggest memory chip maker, seems fully prepared defend its technical superiority against Chinese competitors. The company has confirmed it is developing 4F² VCT (Vertical Channel Transistor) DRAM manufacturing technology, which packs more capacity into the same physical area.

Recently, Chinese memory maker Changxin Memory Technology (CXMT) announced plans to release server DRAM using 4F² technology by the end of 2026, which led to a drop in Samsung's share price. However, when a reporter asked Song Jae-hyuk, Chief Technology Officer (CTO) and President of Samsung Electronics, if the company is working on the same technology, he confirmed it by answering “Yes” during the 28th Semiconductor Exhibition (SEDEX 2026) at COEX in Gangnam-gu, Seoul, South Korea.

Higher density is crucial for meeting the rising demand for AI servers, but traditional DRAM is reaching its 2D scaling limit. This makes 4F² the next step in the development of new DRAM architectures. The new cell structure drastically reduces the physical footprint of each memory cell by building upright instead of horizontally. This allows companies to pack more data storage capacity within the same chip area.

After 4F², memory chip makers are expected to transition to true 3D DRAM architectures, which will allow them to pack even more capacity into the same area while reducing power consumption.

Samsung has been at the forefront of memory chip technology for decades and is “working hard” to ensure its technological superiority remains intact against newer rivals in the industry. It has already showcased next-generation memory technologies, including zHBM and zNAND-O.