Last updated: August 5th, 2026 at 10:13 UTC+02:00
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Samsung Electronics
Alongside the zHBM concept, Samsung Electronics unveiled its V10 BV-NAND storage chip at the Future of Memory and Storage (FMS) 2026 expo today. It uses the company's 10th-generation vertical NAND flash memory architecture and represents a major technical upgrade over previous-generation NAND flash chips.
V10 BV-NAND uses a new wafer-bonding technology, making Samsung the first company in the industry to introduce this type of architecture. The technology allows the company to stack more than 400 layers, resulting in around 58% higher memory density than its ninth-generation (V9) NAND flash chips. It also offers improved read, write, and I/O performance, along with better energy efficiency.
This new chip is designed to handle real-time, data-intensive workloads in AI servers by offering higher performance while consuming less power.
Samsung Electronics
Design mockup of Samsung's V10 BV-NAND chip at the Future Memory and Storage 2026 expo
Samsung has not announced the commercial availability of its V10 BV-NAND chips. However, they could become available before V11 NAND flash chips, which are expected to be announced sometime in 2027.
First Samsung device: T100
Asif is a computer engineer turned technology journalist. He has been using Samsung phones since 2004, and his current smartphone is the Galaxy S23 Ultra. He loves headphones, mechanical keyboards, and PC hardware. When not writing about technology, he likes watching crime and science fiction movies and TV shows.
