Samsung and IBM have published a paper detailing their advancements in Spin-Transfer Torque Magnetoresistive RAM (or STT MRAM) that has resulted in smaller-sized chips to be used in wearables and IoT devices. STT MRAM is small and can fit inside wearables (which are relatively small when compared with most high-end electronics), uses zero power when idle due to its resistance, and can likely outlast current memory chips. STT MRAM also boasts faster read/write speeds, with NAND flash requiring 1 microsecond to write data as opposed to STT MRAM's 10 nanoseconds. This new MRAM development could result in the eventual replacement of DRAM, despite the fact that upcoming devices such as Samsung's Galaxy Note 7 will still pay homage to the old guard. While DRAM replacement may take a while, embedded flash could be substituted in a much quicker fashion.
You can find out more about STT MRAM and its potential at the link below.
