Samsung mass producing 3D vertical NAND flash chips

Samsung has announced that it will begin mass producing 3D “vertical NAND” (V-NAND) flash chips, to get around the current scaling limit for existing NAND flash technology: instead of using a traditional flat structure, Samsung is now stacking components on the chip vertically – up to 24 cell layers high – to enable higher density NAND flash memory products without having to continue planar (flat) scaling.

Moving to V-NAND has several advantages. The new chips are 2 to 10 times more reliable and offer 2x the write performance compared to existing 10nm flash memory. Remember how processors started getting more cores instead of amping up the frequency on a single core once the gigahertz limit was reached? Well, it's pretty much the same effect here, as a multi-level structure allows for better performance even though it's nigh on impossible to reduce the architecture size any further.

These V-NAND chips are expected to power anything from consumer SSDs to embedded flash storage (in mobile devices) in the near future.

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Abhijeet Mishra - Editor-in-Chief

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First Samsung device: SGH-D500

Abhijeet's writing career started with guides for custom firmware for Samsung devices (including the original Galaxy S), and he moved to SamMobile in mid-2013 and worked up the ranks to Editor-in-chief. In addition to phones and mobile devices, his interests include gaming on both PC and console, PC hardware, and spending countless hours on YouTube watching videos on tech, movies, games, politics, and internet dramas.

Phone Flash memory Flash Storage NAND V-NAND