Samsung's next AI memory chip leverages its 2nm process for 50% more speed

Samsung makes high-bandwidth memory chips which are critical for the AI infrastructure buildout. The company continues to push the envelope in this space, and has revealed some interesting details about its next-generation HBM chip.

The company has revealed that it has applied its 2nm process technology to its next-generation HBM5 chips to achieve a 50% speed improvement.

Gu Jahum, head of technology development for Samsung's foundry business, said that HBM5 is expected to process data over 50% faster than HBM4E. Samsung intends to achieve this by applying its 2nm process to the base die, the base upon which multiple layers of DRAM are stacked. This will help increase both speed and power efficiency.

The company's 2nm Gate-All-Around process technology will be utilized for its HBM4 chips. Through-silicon-vias, which are the fine electrodes that connected DRAM layers, will also be implemented at a denser pitch in HBM5.

Samsung has been rapidly commercializing its advanced process technologies as the AI buildout creates immense demand. It has already begun mass production of chips based on its first-gen 2nm process. The company is planning to begin mass production of new smartphone chips on its second-generation 2nm process, which has improved yields and performance, in the second half of this year.