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Last updated: April 18th, 2024 at 13:48 UTC+02:00
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Not one to rest on its laurels, the company continues to push the envelope on its high-bandwidth memory technology. It has announced the test production of a new 16-stack module that delivers better efficiency and performance.
Samsung vice president Kim Dae-woo revealed during the Korean Microelectronics and Packaging Society conference that the company has manufactured a smple of 16-stack high-bandwidth memory. This was achieved through a hybrid bonding process.
This is merely a proof of concept at this stage as mass production of the 16-stack HBM is going to take some time. Despite that, Samsung says that this module operated normally. This chip was developed as HBM3 but Samsung is planning to use a HBM4 to improve the productivity of this chip.
The company continues to evaluate its options regarding the use of hybrid bonding and thermal compression non-conductive film for HBM4. It will launch HBM4 samples next year with mass production potentially starting in 2025. Hybrid bonding is said to be more beneficial as it would enable the company to made stacks more compactly without having to utilize through-silicon-via or TSV that requires filler bumps to connect.
Adnan Farooqui is a long-term writer at SamMobile. Based in Pakistan, his interests include technology, finance, Swiss watches and Formula 1. His tendency to write long posts betrays his inclination to being a man of few words.
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