Samsung joins hands with IISc to boost semiconductor research in India

The research agreement was exchanged by Balajee Sowrirajan, CVP and MD at Samsung Semiconductor India Research (SSIR), Bengaluru, and Prof. Govindan Rangarajan, Director, Indian Institute of Science (IISc). The official announcement revolves around building ESD devices to protect ultra-high-speed serial interfaces in advanced ICs and SoC products.

Balajee Sowrirajan, CVP and MD, SSIR, said, “Our partnership with IISc will help in boosting semiconductor innovation and develop ESD knowledge. Our goal is to increase capacity building through training programs at the postgraduate level, opening up opportunities for students to pursue industry internships, and encourage entrepreneurial ventures by young researchers.”

The research agreement between SSIR and IISc aims to lower IC and SoC failures because of ESD

The research related to the agreement between Samsung Semiconductor India Research (SSIR) and the Indian Institute of Science (IISc) will be carried out by Prof. Mayank Shrivastava’s group at the Department of Electronic Systems Engineering (DESE), IISc. The main aim of this collaboration is to mitigate the IC chip failures and field returns that are caused by ESD failures.

Enhancing the R&D in building ESD for ICs and SOCs that are reliable and operate at low power and high speed will be the agenda of this collaboration. IISc is one of the few institutes in the world that is engaged in ESD device research.

Prof. Mayank Shrivastava, head of MSDLab, said, “We have been collaborating extensively with semiconductor industries worldwide on advanced nanoelectronics technologies, including solutions to ESD reliability threats to advanced SoCs. We have carried out both fundamental and applied research on ESD protection devices, with a strong emphasis on creating practical solutions for the semiconductor industry in a range of technology nodes.”