Samsung on track to ramp up 10nm FinFET process technology production

Samsung today announced that it’s on track to ramp up production of the 10nm FinFET process technology with steady high yield in order to meet customer needs on schedule. The company has shipped more than 70,000 silicon wafers of its first-generation 10nm LPE (Low Power Early) to date after starting the industry’s first mass production of 10LTE in October last year. Both the Qualcomm Snapdragon 835 and Samsung’s Exynos 8895 are based on the 10nm process.

“Samsung’s 10nm LPE is a game changer in the foundry industry. Following the 10LPE version, the 10nm LPP and LPU will enter mass production by the end of the year and next year, respectively.” said Jongshik Yoon, Executive Vice President and Head of Foundry Business at Samsung Electronics.

Samsung has also announced the addition of the 8nm and the 6nm process technologies to its existing process roadmap. These new process technologies will provide improved scalability, performance and power advantages compared to existing process nodes. All of the innovations from the latest 10nm and 7nm technology will be ported over to 8nm and 6nm processes.

The company is going to share more details about its foundry technology roadmap as well as the technical details at the U.S. Samsung Foundry Forum that’s due to take place on May 24th.

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