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Last updated: March 6th, 2024 at 18:38 UTC+01:00
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The company's new 10nm FinFET process uses advanced 3D transistor structure with additional improvements being made to the process technology and design enablement compared to the 14nm process. Samsung says this allows an up to 30 percent increase in area efficiency with 27 percent higher performance or 40 percent lower power use. Samsung has also said that the second-generation 10nm processor with performance boost is slated to enter mass production by the second half of next year. Devices powered by these new SoC products will be launched early next year.
Adnan Farooqui is a long-term writer at SamMobile. Based in Pakistan, his interests include technology, finance, Swiss watches and Formula 1. His tendency to write long posts betrays his inclination to being a man of few words.