Samsung to mass produce 14 nm flat NAND flash in 2016

Samsung Electronics recently finished the development process of a 14 nanometer (nm) flat NAND flash and plans to mass produce it in the first half of 2016. The South Korean giant will be introducing this new memory to the market at the International Solid-State Circuits Conference (ISSCC), which will take place in San Francisco on the 31st of January.

One of the big advantages of the 14 nm flat NAND flash is a high efficiency in production costs. Another upside is the fact that this type of memory will be far more efficient in reading and writing, and it will reduce errors during data input/output. This is a cornerstone of innovation as experts claim that Samsung has broken through an unbreakable barrier. If you remember, there was a rumor six months ago according to which Samsung would provide NAND flash memory to the next generation iPhone so the fact that the tech company is going to start mass producing this 14 nm flash memory means that it could be trying to secure various deals in the general handset industry too.



Sign in »

Leave a Reply

This site uses Akismet to reduce spam. Learn how your comment data is processed.