Samsung expected to use its next-generation flagship smartphones with super-fast UFS flash memory

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Last updated: November 12th, 2014 at 16:43 UTC+01:00

Korean website ETNews is reporting that Samsung is gearing up to produce super-fast UFS 2.0 NAND Flash memory in order to equip its next-generation flagship smartphone, the Galaxy S6, with faster data storage solution. As opposed to the current eMMC NAND Flash technology, which can reach an average file transfer speed of up to 400MB/s, the newer UFS (Universal Flash Storage) 2.0 NAND Flash memory has capabilities to reach file transfer speeds of up to 1.2GB/s. This kind of bandwidth is necessary when downloading huge amounts of data such as 4K videos over LTE-A or faster networks. Apparently, this new data storage technology consumes just half the power when compared to eMMC 5.0. Samsung is reportedly in a process of replacing SD and microSD cards with UFS-based solutions in its upcoming flagship devices. As the leading manufacturer of NAND Flash storage components, the Korean giant is in a strong position to spearhead this evolution.

Even the Chinese rival, Xiaomi, is planning to use UFS-based storage solution for its upcoming devices, though its plans aren’t public yet. Other flash storage manufacturers who are betting on this technology are Toshiba, Hynix, and Micron. If Samsung uses this storage technology in the Galaxy S6, they might have to use a microUSB v3.0 port in it for faster data transfer. Earlier this month, we exclusively reported that Samsung is building its next generation flagship smartphone, the Galaxy S6, from scratch, and has codenamed it as Project Zero.

If you are curious to know more about UFS-based storage technology, you can watch this video, where an official from Toshiba is explaining the difference between eMMC and UFS.

Via | Source

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