Last updated: March 17th, 2026 at 09:07 UTC+01:00
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The company also showcased its HBM4 chip, SOCAMM2 memory module, and the PM1763 SSD that are designed for Nvidia's AI infrastructure.
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Samsung
Just a month after announcing the mass production of HBM4 chips for AI accelerators, Samsung has unveiled its seventh-generation high-bandwidth memory, HBM4E. It offers even faster performance than HBM4 and is expected to be used in Nvidia’s next-generation AI accelerator platform.
At Nvidia GTC 2026 in San Jose, California, Samsung Electronics showcased its HBM4E chip for the first time, becoming the first company in the world to do so. The chip delivers data transfer speeds of up to 16Gbps per pin and bandwidth of up to 4TB/s. It is expected to be used in Nvidia’s Vera Rubin Ultra platform, which could launch in the second half of 2027. So, the mass production could start sometime in the first half of next year.
Samsung also announced plans for future HBM technologies. The company intends to use its 1c DRAM process along with a 2nm foundry process to develop eighth-generation HBM5 chips. For ninth-generation HBM5E chips, Samsung plans to use its 1d DRAM process alongside a 2nm foundry process.
The company also showcased its Hybrid Cap Bonding (HCB) technology, which is expected to serve as a key differentiator for its future HBM chips compared to competitors.
During the event, Nvidia CEO Jensen Huang visited Samsung Electronics’ booth and signed “Amazing HBM4” on an HBM4 wafer displayed at the booth.
Asif is a computer engineer turned technology journalist. He has been using Samsung phones since 2004, and his current smartphone is the Galaxy S23 Ultra. He loves headphones, mechanical keyboards, and PC hardware. When not writing about technology, he likes watching crime and science fiction movies and TV shows.
