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Last updated: July 27th, 2013 at 11:16 UTC+02:00
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The new chip is based on 64GB 10nm class NAND flash technology and will be the first to support the eMMC 5.0 standard, which will allow theoretical interface speeds of up to 400MB/s and come in the standard 16, 32, and 64GB variants. The latter two are supposedly capable of sequential read and write speeds of 250MB/s and 90MB/s, that should result in much faster performance in multitasking, browsing, file transfers, HD video capture, gaming, and pretty much any task these chips have to perform. In short, that's 10 times the speed of a class 10 external memory card (which reads at 24MB/s and writes at 12MB/s), which is inspiring any way you look at it.
Again, just like the 3GB of RAM, we would expect the Galaxy Note III to be the first device that uses this faster and more capable storage chip. Current smartphones are no slouches in the performance department, but if Samsung has its way, high-end smartphones are going to see a multifold increase in raw performance across the board.
Abhijeet's writing career started with guides for custom firmware for Samsung devices (including the original Galaxy S), and he moved to SamMobile in mid-2013 and worked up the ranks to Editor-in-chief. In addition to phones and mobile devices, his interests include gaming on both PC and console, PC hardware, and spending countless hours on YouTube watching videos on tech, movies, games, politics, and internet dramas.